onsemi 2N6405
Silicon Controlled Rectifiers
| Part No. | 2N6405 |
|---|---|
| Datasheet | 2N6405 Download |
| Manufacturer |  onsemi |
| Description | Silicon Controlled Rectifiers |
| Buy | Stock & Price |
FEATURES
● Glass Passivated Junctions with Center Gate Geometry for Greater Parameter Uniformity and Stability● Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
● Blocking Voltage to 800 V
● These are Pb−Free Devices
MAXIMUM RATINGS
* (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (TJ = *40 to 125°C, Sine Wave 50 to 60 Hz; Gate Open) 2N6400 2N6401 2N6402 2N6403 2N6404 2N6405 VDRM, VRRM 50 100 200 400 600 800 V On-State Current RMS (180° Conduction Angles; TC = 100°C) Average On-State Current (180° Conduction Angles; TC = 100°C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 25°C) Circuit Fusing Considerations (t = 8.3 ms) IT(RMS) IT(AV) ITSM I2t 16 10 160 145 A A A A2s Forward Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 100°C) Forward Average Gate Power (t = 8.3 ms, TC = 100°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TC = 100°C) Operating Junction...
