onsemi 2N6490
COMPLEMENTARY SILICON POWER TRANSISTORS
| Part No. | 2N6490 |
|---|---|
| Datasheet | 2N6490 Download |
| Manufacturer |  onsemi |
| Description | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Buy | Stock & Price |
FEATURES
● High DC Current Gain● High Current Gain − Bandwidth Product
● TO−220 Compact Package
● These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
(Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N6487, 2N6490 2N6488, 2N6491 VCEO 60 80 Vdc Collector−Base Voltage 2N6487, 2N6490 2N6488, 2N6491 VCB Vdc 70 90 Emitter−Base Voltage Collector Current − Continuous Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C VEB 5.0 Vdc IC 15 Adc IB 5.0 Adc PD 75 W 0.6 W/°C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 1.8 W 0.014 W/°C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Thermal Resistance,...
