onsemi 2N6497
POWER TRANSISTORS NPN SILICON
| Part No. | 2N6497 |
|---|---|
| Datasheet | 2N6497 Download |
| Manufacturer |  onsemi |
| Description | POWER TRANSISTORS NPN SILICON |
| Buy | Stock & Price |
MAXIMUM RATINGS
(1) Rating Symbol VCEO VCB VEB IC IB 2N6497 250 350 6.0 5.0 10 2.0 2N6498 300 400 6.0 5.0 10 2.0 Unit Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous — Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C PD 80 0.64 80 0.64 Watts W/_C Operating and Storage Junction Temperature Range TJ,Tstg – 65 to + 150 – 65 to + 150 _C THERMAL CHARACTERISTICS Characteristic Symbol RθJC Max Unit Thermal Resistance, Junction to Case 1.56 _C/W (1) Indicates JEDEC Registered Data. Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2N6497 2N6498 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ...
