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2N6509 Datasheet PDF

onsemi 2N6509

Silicon Controlled Rectifiers

Part No. 2N6509
Datasheet 2N6509 Download
Manufacturer
onsemi
Description Silicon Controlled Rectifiers
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2N6509 datasheet page 1 preview

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted) Rating *Peak Repetitive Off–State Voltage (Note 1.) (Gate Open, Sine Wave 50 to 60 Hz, TJ = 25 to 125°C) 2N6504 2N6505 2N6507 2N6508 2N6509 On-State RMS Current (180° Conduction Angles; TC = 85°C) Average On-State Current (180° Conduction Angles; TC = 85°C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 100°C) Forward Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 85°C) Forward Average Gate Power (t = 8.3 ms, TC = 85°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 85°C) Operating Junction Temperature Range Storage Temperature Range *Indicates JEDEC Registered Data 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Symb...
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