onsemi 2N7008
Small-Signal Field Effect Transistor
| Part No. | 2N7008 |
|---|---|
| Datasheet | 2N7008 Download |
| Manufacturer |  onsemi |
| Description | Small-Signal Field Effect Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1 mW) Gate−to−Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @ TA = 25°C Derate above 25°C VDSS VDGR VGS ID IDM PD 60 60 40 150 1000 400 3.2 Vdc Vdc Vdc mAdc mW mW/°C Operating and Storage temperature Range TJ, Tstg −5.5 to °C +150 THERMAL CHARACTERISTIC Thermal Resistance Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, 1/16 in from Case for 10 Seconds RqJA TL 312.5 300 °C/W °C N−CHANNEL SMALL SIGNAL TMOS FET, RDS(ON) = 7.5 W, 60 V D G S MARKING DIAGRAM TO−92 (TO−226) CASE 29 © Semiconductor Components Industries, LLC, 2003 1 October, 2003 − Rev. 0 Publication Order Number: 2N7008/D 2N7008ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted) Characteristics OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0, ID = 100 mA) Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) (VDS = 50 V, VGS = 0, TJ = 125°C) Gate−to−Body Leakage...
