onsemi 2SA1943
PNP Epitaxial Silicon Transistor
| Part No. | 2SA1943 |
|---|---|
| Datasheet | 2SA1943 Download |
| Manufacturer |  onsemi |
| Description | PNP Epitaxial Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● High Current Capability: IC = 17 A● High Power Dissipation: 150 W
● High Frequency: 30 MHz
● High Voltage: VCEO = −250 V
● Wide S.O.A. for Reliable Operation
● Excellent Gain Linearity for Low THD
● Complement to 2SC5200 / FJL4315
● Thermal and Electrical Spice Models are Available
● Same Transistor is also Available in: ♦ TO3P Package, 2SA1962 / FJA4213 : 130 Watts ♦ TO220 Package, FJP1943 : 80 Watts ♦ TO220F Package, FJPF1943 : 50 Watts
● These Devices are Pb−Free and are RoHS Compliant
APPLICATIONS
● High−Fidelity Audio Output Amplifier● General Purpose Power Amplifier
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Parameter Symbol Ratings Units Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current (DC) Base Current Total Device Dissipation (TC = 25°C) Derate Above 25°C BVCBO BVCEO BVEBO IC IB PD −250 −250 −5 −17 −1.5 150 1.04 V V V A A W W/°C Junction and Storage Temperature TJ, TSTG −50 ~ +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device.
