onsemi 2SA2016
Bipolar Transistor
FEATURES
● Adoption of FBET and MBIT processes● Large current capacity
● Low collector-to-emitter saturation voltage
● High-speed switching
● Ultrasmall package facilitales miniaturization in end products
● High allowable power dissipation ( )2SA2016 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage VCBO VCES VCEO VEBO Package Dimensions unit : mm (typ) 7008B-003 Top View 4.5 1.6 2SA2016-TD-E 2SC5569-TD-E 1.5 Conditions Ratings (-50)100 (-50)100 (--)50 (--)6 Unit V V V V Continued on next page. Product & Package Information● Package : PCP
● JEITA, JEDEC : SC-62, SOT-89, TO-243
● Minimum Packing Quantity : 1,000 pcs./reel Packing Type: TD 1.0 2.5 4.0 AW LOT No. FF LOT No. 1 0.4 0.5 2 1.5 3.0 3 0.4 0.75 Bottom View 1 : Base 2 : Collector 3 : Emitter PCP TD Marking 2SA2016 2SC5569 Electrical Connection 22 11 3 2SA2016 3 2SC5569 Semiconductor Components Industries,...