onsemi 2SA2040
Bipolar Transistor
FEATURES
● Adoption of FBET and MBIT Processes● Low Collector−to−emitter Saturation Voltage
● Large Current Capacitance
● High−speed Switching
● High Allowable Power Dissipation
● These are Pb−Free Devices
APPLICATIONS
● DC / DC Converter, Relay Drivers, Lamp Drivers, Motor Drivers, Flash Specifications ( ): 2SA2040ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Parameter Symbol Conditions Ratings Unit Collector−to−Base Voltage VCBO (−50)100 V Collector−to−Emitter Voltage VCES (−50)100 V VCEO (−)50 V Emitter to Base Voltage VEBO (−)6 V Collector Current IC (−)8 A Collector Current (Pulse) ICP (−)11 A Base Current IB (−)2 A Collector Dissipation PC 1.0 W Tc = 25°C 15 Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DATA SHEET 4 123 IPAK / TP CASE 369AJ 1: Base 2: Collector 3: Emitter 4: Collector 4 123 DPAK / TP−FA CASE 369AH MARKING DIAGRAMS A2040 LOT No.