onsemi 2SA2125
Bipolar Transistor
| Part No. | 2SA2125 |
|---|---|
| Datasheet | 2SA2125 Download |
| Manufacturer |  onsemi |
| Description | Bipolar Transistor |
| Buy | Stock & Price |
FEATURES
● Adoption of MBIT Processes● Low Collector to Emitter Saturation Voltage
● Large Current Capacity
● High−Speed Switching
● Halogen Free Compliance
APPLICATIONS
● DC−DC Converter, Relay Drivers, Lamp Drivers, Motor Drivers, Flash Specifications ( ): 2SA2125ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Symbol Parameter Conditions Ratings Unit VCBO Collector to Base Voltage − (−50)100 V VCES Collector to Emitter Voltage − (−50)100 V VCEO Collector to Emitter Voltage − (−)50 V VEBO Emitter to Base Voltage − (−)6 V IC Collector Current − (−)3 A ICP Collector Current (Pulse) − (−)6 A IB Base Current − (−)600 mA PC Collector Dissipation When mounted on 1.3 W ceramic substrate (250 mm2 x 0.8 mm) TC = 25°C Tj Junction Temperature − 3.5 W 150 °C Tstg Storage Temperature − −55 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
