onsemi 2SA2197
PNP / NPN Epitaxial Planar Silicon Transistors
| Part No. | 2SA2197 |
|---|---|
| Datasheet | 2SA2197 Download |
| Manufacturer |  onsemi |
| Description | PNP / NPN Epitaxial Planar Silicon Transistors |
| Buy | Stock & Price |
APPLICATIONS
APPLICATIONS
● Relay drivers, lamp drivers, motor drivers, flash.FEATURES
● Adoption of MBIT process.● Large current capacitance.
● Low collector-to-emitter saturation voltage.
● High-speed switching.
● High allowable power dissipation. Specifications ( ) : 2SA2197
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°CELECTRICAL CHARACTERISTICS
at Ta=25°C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=(--)30V, IE=0A VEB=(--)4V, IC=0A VCE=(--)2V, IC=(--)500mA VCE=(--)10V, IC=(--)500mA VCB=(--)10V, f=1MHz Ratings (--30)40 (--)30 (--)6 (--)7 (--)9 (--)1.2 1 10 150 --55 to +150 Unit V V V A A A W W °C °C min 200 Ratings typ max Unit (--)0.1 µA (--)0.1 µA 560 (250)290 MHz (52)40 pF Continued on next page. © 2011, SCILLC.
