onsemi 2SA2202
Bipolar Transistor
FEATURES
● Adoption of FBET, MBIT processes● Low collector to emitter saturation voltage
● High allowable power dissipation
● Large current capacity
● High-speed switching Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCES VCEO VEBO IC ICP Conditions Ratings --100 --100 --100 --7 --2 --3 Unit V V V V A A Continued on next page. Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7007B-004 Top View 4.5 1.6 2SA2202-TD-E 1.5 Product & Package Information● Package : PCP
● JEITA, JEDEC : SC-62, SOT-89, TO-243
● Minimum Packing Quantity : 1,000 pcs./reel Packing Type: TD Marking 1.0 2.5 4.0 RC LOT No.