onsemi 2SB1203
The 2SB1203/2SD1803 are classified by 0.5 A hFE as follows: Rank hFE Q 70 to 140 Switching Time Test Circuit R 100 to 200 S 140 to 280 T 200 to 400 PW = 20 ms IB1 D.C.| Part No. | 2SB1203 |
|---|---|
| Datasheet | 2SB1203 Download |
| Manufacturer |  onsemi |
| Description | Bipolar Transistor |
| Buy | Stock & Price |
FEATURES
● Low Collector−to−Emitter Saturation Voltage● Excellent Linearity of hFE
● Small and Slim Package Making It Easy to Make 2SB1203/2SD1803−Applied Sets Smaller
● High Current and High fT
● Fast Switching Speed
APPLICATIONS
● Relay Drivers, High−Speed Inverters, Converters, and Other General High−Current SwitchingAPPLICATIONS
ELETRICAL CONNECTION 2.4 2.4 1 1 3 2SB1203 3 2SD1803 IPAK / TP CASE 369AJ DPAK / TP−FA CASE 369AH MARKING DIAGRAM B1203 D1803ABSOLUTE MAXIMUM RATINGS
(at Ta = 25C) Symbol Parameter Condition Rating Unit VCBO Collector−to−Base Voltage (−)60 V VCEO Collector−to−Emitter Voltage (−)50 V VEBO Emitter−to−Base Voltage (−)6 V IC Collector Current (−)5 A ICP Collector Current (Pulse) (−)8 A PC Collector Dissipation 1 W Tc = 25C 20 W Tj Junction Temperature 150 C Tstg Storage Temperature −55 to C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
