onsemi 2SB1229
The 2SB1229/2SD1835 are classified by 100mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 U 280 to 560 Switching Time Test Circuit INPUT VR IB1 IB2 RB OUTPUT RL 50Ω ++ 100μF 470μF VBE= --5V VCC IC=10IB1= --10IB2=500mA, VCC=25V (For PNP, the polarity is reversed.) Ratings min typ (–)0.9 (–)60 (–)50 (–)6 60(60) 550 (450) 30 30 max (–)1.2 Unit V V V V ns ns ns ns ns Collector Current, IC – A --2.4 --2.0 --1.6 --1.2 --0.8 --0.4 0 0 --1200 --1000 --800 --600 --400 --200 0 0 IC -- VCE --50mA --20mA --10mA --8mA --6mA --4mA --2mA 2SB1229 IB=0 --0.4 --0.8 --1.2 --1.6 --2.0 --2.4...| Part No. | 2SB1229 |
|---|---|
| Datasheet | 2SB1229 Download |
| Manufacturer |  onsemi |
| Description | PNP/NPN Epitaxial Planar Silicon Transistors |
| Buy | Stock & Price |
APPLICATIONS
APPLICATIONS
● Voltage regulators, relay drivers, lamp drivers, electrical equipment.FEATURES
● Adoption of FBET, MBIT processes.● Large current capacity.
● Low collector-to-emitter saturation voltage.
● Fast switching time. Package Dimensions unit:mm 2003B [2SB1229/2SD1835] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 ( ) : 2SB1229 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)50V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)100mA VCE=(–)2V, IC=(–)1.5A VCE=(–)10V, IC=(–)50mA VCB=(...
