onsemi 2SC2712GT1G
The 2SC2712GT1G is designed for low to medium frequency applications such as wireless toys. The targeted design enables improved performance versus the industry standard MMBT3904* in some key parametric specifications.| Part No. | 2SC2712GT1G |
|---|---|
| Datasheet | 2SC2712GT1G Download |
| Manufacturer |  onsemi |
| Description | Medium Frequency NPN Amplifier Transistor |
| Buy | Stock & Price |
FEATURES
COLLECTOR 3●
●
●
●
● Lower VCE(sat)* Higher Gain (hfe)* Higher Breakdown Voltage Rating* Moisture Sensitivity Level: 1 This is a Pb−Free Device 2 BASE 1 EMITTER Benefits
● Longer Battery Life
● Improved Performance Through Targeted Design
MAXIMUM RATINGS
(TA = 25°C) Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) IB Value 60 50 5.0 150 200 30 Unit Vdc Vdc Vdc mAdc mAdc mAdc 3 2 1 SC−59 CASE 318D STYLE 1 MARKING DIAGRAMS SCG M SCG = Specific Date Code M = Date Code THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 − 55 to +150 Unit mW °C °C ORDERING INFORMATION Device 2SC2712GT1G Package SC−59 (Pb−Free) Shipping† 3000/Tape & Reel Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
