onsemi 2SC2812N
Bipolar Transistor
FEATURES
● Miniature package facilitates miniaturization in end products● High breakdown voltage Specifications ( ) : 2SA1179N
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Ratings (--)55 (--)50 (--)5 (--)150 (--)300 (--)30 200 150 --55 to +150 Unit V V V mA mA mA mW °C °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7053-001 0.45 3 0.13 2SA1179N6-TB-E 2SA1179N6-CPA-TB-E 2SC2812N6-TB-E 2SC2812N6-CPA-TB-E 0 to 0.1 Product & Package Information● Package : CPA
● JEITA, JEDEC : SC-59, TO-236, SOT-23, TO-236AB
● Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TB 1.3 2.4 0.55 0.55 0.2 MIN 1 0.95 1.9 2.93 2 1.0 1.