onsemi 2SC3648
Bipolar Transistor
FEATURES
● Adoption of FBET, MBIT Processes● Fast Switching Speed
● Ultrasmall Size Making it Easy to Provide High−density, Small−sized Hybrid IC’s
● High Breakdown Voltage and Large Current Capacity
● This is a Pb−Free Device AD LOT No. CD LOT No. MARKING DIAGRAM RANK 2SA1418 RANK 2SC3648
APPLICATIONS
● Color TV Audio Output, Inverter Specifications ( ): 2SA1418ABSOLUTE MAXIMUM RATINGS
(TA = 25C) Parameter Symbol Conditions Ratings Unit Collector−to−Base Voltage VCBO (−)180 V Collector−to−Emitter Voltage VCEO (−)160 V Emitter−to−Base Voltage VEBO (−)6 V Collector Current IC (−)0.7 A Collector Current (Pulse) ICP (−)1.5 A Collector Dissipation PC 500 mW When mounted on 1.3 W ceramic substrate (250 mm2 x 0.8 mm) Junction Temperature Tj 150 C Storage Temperature Tstg −55 to C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.