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2SC4081RT1 Datasheet PDF

onsemi 2SC4081RT1

General Purpose Amplifier Transistor

Part No. 2SC4081RT1
Datasheet 2SC4081RT1 Download
Manufacturer
onsemi
Description General Purpose Amplifier Transistor
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2SC4081RT1 datasheet page 1 preview

FEATURES

● Moisture Sensitivity Level: 1
● Pb−Free Package is Available

MAXIMUM RATINGS

(TA = 25°C) Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc Collector−Emitter Voltage V(BR)CEO 50 Vdc Emitter−Base Voltage V(BR)EBO 7.0 Vdc Collector Current − Continuous IC 100 mAdc Collector Current − Peak IC(P) 200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 °C Storage Temperature Tstg −55 to +150 °C Stresses exceeding

MAXIMUM RATINGS

may damage the device.

MAXIMUM RATINGS

are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector−Emitter Breakdown Voltage V(BR)CEO 50 (IC = 2.0 mAdc, IB = 0) − Vdc Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)...
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