onsemi 2SC4135
Bipolar Transistor
FEATURES
● Adoption of FBET, MBIT Process● Fast Switching Speed
● Small and Slim Package Permitting 2SA1593 / 2SC4135 − Applied Sets to be Made More Compact
● High Breakdown Voltage and Large Current Capacity
APPLICATIONS
● Power Supplies, Relay Drivers, Lamp Drivers SPECIFICATIONS ( ): 2SA1593ABSOLUTE MAXIMUM RATINGS
at Ta = 25°C Parameter Symbol Conditions Ratings Unit Collector−to−Base Voltage VCBO − (−)120 V Collector−to−Emitter Voltage VCEO − (−)100 V Emitter−to−Base Voltage VEBO − (−)6.0 V Collector Current IC − (−)2.0 A Collector Current (Pulse) ICP − (−)3.0 A Collector Dissipation PC − 1.0 W TC = 25°C 15 W Junction Temperature Tj − 150 °C Storage Temperature Tstg − − 55 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DATA SHEET ELECTRICAL CONNECTION 2.4 1 3 DPAK / TP−FA CASE 369AH MARKING DIAGRAM A1593 / C4135 LOT No.