onsemi 2SC4399
The 2SC4399 is classified by 1mA hFE as follows : Marking : F hFE rank : 3, 4, 5 Rank hFE 3 60 to 120 4 90 to 180 5 135 to 270 0.3 0.6 0.9 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Ratings 30 20 5 30 150 150 –55 to +150 Unit V V V mA mW ˚C ˚C Ratings min typ 60* 200 320 0.9 12 25 3.0 max 0.1 0.1 270* 1.2 20 Unit μA μA MHz pF ps dB dB © 2011, SCILLC.| Part No. | 2SC4399 |
|---|---|
| Datasheet | 2SC4399 Download |
| Manufacturer |  onsemi |
| Description | NPN Epitaxial Planar Silicon Transistors |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High power gain : PG=25dB typ (f=100MHz).● Ultrasmall-sized package permitting the 2SC4399- applied sets to be made small and slim. 0.425 Package Dimensions unit:mm 2059B [2SC4399] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse transfer Capacitance Base-to-Collector Time Constant Power Gain Noise Figure ICBO IEBO hFE fT Cre rbb'Cc PG NF VCB=10V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=1mA VCB=6V, f=1MHz VCB=6V, IC=1mA, f=31.9MHz VCB=6V, IC=1mA, f=100MHz VCB=6V, IC=1mA, f=100MHz * : All rights reserved. Jan-2011, Rev. 0 Pub...
