onsemi 2SC4614
Bipolar Transistor
FEATURES
●● Adoption of MBIT process High breakdown voltage and large current capacity ( )2SA1770 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (--)180 (--)160 (--)6 (--)1.5 (--)2.5 1 150 --55 to +150 Unit V V V A A W °C °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7540-001 2.5 6.9 1.45 1.05 Product & Package Information● Package : NMP(Taping)
● JEITA, JEDEC : SC-71
● Minimum Packing Quantity : 2,500 pcs./box 2SA1770S-AN 2SA1770T-AN 2SC4614S-AN 2SC4614T-AN Marking(NMP(Taping)) A1770 RANK LOT No.