onsemi 2SC5226A
The 2SC5226A is classified by 20 mA hFE as follows: Rank 3 4 5 hFE 60 to 120 90 to 180 135 to 270 2 hFE, DC CURRENT GAIN Cob, OUTPUT CAPACITANCE (pF) 2SC5226A 3 2 VCE = 5 V 100 7 5 3 2 10 7 5 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 IC, COLLECTOR CURRENT (mA) Figure 1.| Part No. | 2SC5226A |
|---|---|
| Datasheet | 2SC5226A Download |
| Manufacturer |  onsemi |
| Description | RF Transistor |
| Buy | Stock & Price |
FEATURES
● Low−noise: NF = 1.0 dB Typ (f = 1 GHz)● High Gain: ⎪S21e⎪2 = 12 dB Typ (f = 1 GHz)
● High Cut−off Frequency: fT = 7 GHz Typ
● This is a Pb−Free Device Specifications
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Symbol Parameter Value Unit VCBO VCEO VEBO IC PC Tj Collector−to−Base Voltage Collector−to−Emitter Voltage Emitter−to−Base Voltage Collector Current Collector Dissipation Junction Temperature 20 V 10 V 2 V 70 mA 150 mW 150 °C Tstg Storage Temperature −55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DATA SHEET 3 1 2 SC−70 / MCP3 CASE 419AJ MARKING DIAGRAM LOT No. LN R A N K LOT No. LN = Specific Device Code ELECTRICAL CONNECTION 3 1 1: Base 2: Emitter 2 3: Collector ORDERING INFORMATION Device Package Shipping† 2SC5226A−4−TL−E MCP3 3,000 / Tape & (Pb−Free) Reel 2SC5226A−5−TL−E MCP3 3,000 / Tape & (...
