onsemi 2SC5277A
The 2SC5277A is classified by 10mA hFE as follows : Rank 1 2 3 hFE 60 to 120 90 to 180 135 to 270 Ordering Information Device 2SC5277A-2-TL-E Package SMCP Shipping 3,000pcs./reel Ratings min typ 60* 58 3.5 0.45 0.30 8 10 5.5 1.4 0.9 max 1.0 10 270* 0.7 3.0 Unit μA μA GHz GHz pF pF dB dB dB dB memo Pb Free DC Current Gain, hFE Gain-Bandwidth Product, fT -- GHz hFE -- IC 5 VCE=5V 3 2 100 7 5 3 2 10 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA ITR08213 fT -- IC 2 10 7 VCE=5V 5 VCE=1V 3 2 1.0 1.0 23 5 7 10 2 Collector Current, IC -- mA 35 IT14098 No.| Part No. | 2SC5277A |
|---|---|
| Datasheet | 2SC5277A Download |
| Manufacturer |  onsemi |
| Description | RF Transistor |
| Buy | Stock & Price |
FEATURES
● Low-noise : NF=0.9dB typ (f=1GHz)● High gain : NF=1.4dB typ (f=1.5GHz) : ⏐S21e⏐2=10dB typ (f=1.5GHz)
● High cut-off frequency : fT=8GHz typ
● Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ : ⏐S21e⏐2=5.5dB typ (f=1.5GHz)
● Ultrasmall-sized package permitting applied sets to be made small and slim Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Tstg Conditions Ratings 20 10 1.5 30 100 150 --55 to +150 Unit V V V mA mW °C °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7027A-002 1.6 0.3 3...
