onsemi 2SC6096
Bipolar Transistor
FEATURES
● Adoption of FBET, MBIT process● Low collector-to-emitter saturation voltage
● High allowable power dissipation
● Large current capacity
● High-speed switching
● Halogen free compliance Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCES VCEO VEBO IC ICP Package Dimensions unit : mm (typ) 7007B-004 Top View 4.5 1.6 2SC6096-TD-E 2SC6096-TD-H 1.5 Conditions Ratings Unit 120 V 120 V 100 V 6.5 V 2A 3A Continued on next page. Product & Package Information● Package : PCP
● JEITA, JEDEC : SC-62, SOT-89, TO-243
● Minimum Packing Quantity : 1,000 pcs./reel Packing Type: TD Marking 1.0 2.5 4.0 QG LOT No. 1 0.4 0.5 2 1.5 3.0 3 0.4 0.75 Bottom View 1 : Base 2 : Collector 3 : Emitter PCP TD Electrical Connection 2 1 3 Semiconductor Components Industries, LLC, 2013 September, 2013 82912 TKIM/62006EA MSIM TB-00002425 No. A0434-1/6 2SC6096 Continued from preceding page.