onsemi 2SD1626
PNP / NPN Epitaxial Planar Silicon Transistors
APPLICATIONS
● Relay drivers, hammer drivers, lamp drivers, motor drivers.FEATURES
● High DC current gain (4000 or greater).● Large current capacity.
● Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications ( ) : 2SB1126
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Mounted on a ceramic board (250mm2✕0.8mm)ELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Marking 2SB1126 : BI 2SD1626 : DI Symbol ICBO IEBO Conditions VCB=(--)40V, IE=0A VEB=(--)8V, IC=0A min Ratings (--)80 (--)50 (--)10 (--)1.5 (--)3 500 1.5 150 --55 to +150 Unit V V V A A mW W °C °C Ratings typ max Unit (--)100 nA (--)100 nA Continued on next page. © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com Publication Order Number: 2SB1126_2SD1626/D Continued from preceding page.