onsemi 2SD1801
Bipolar Transistor
| Part No. | 2SD1801 |
|---|---|
| Datasheet | 2SD1801 Download |
| Manufacturer |  onsemi |
| Description | Bipolar Transistor |
| Buy | Stock & Price |
FEATURES
● Adoption of FBET, MBIT Processes● Low Collector−to−Emitter Saturation Voltage
● Small and Slim Package Making it Easy to Make 2SB1201 / 2SD1801 − Used Sets Smaller
● Large Current Capacitance and Wide ASO
● These are Pb−Free Devices
APPLICATIONS
● Voltage Regulators, Relay Drivers, Lamp Drivers, Electrical EquipmentABSOLUTE MAXIMUM RATINGS
(at Ta = 25°C) Parameter Symbol Conditions Ratings Unit Collector−to−Base Voltage VCBO (−)60 V Collector−to−Emitter Voltage VCEO (−)50 V Emitter−to−Base Voltage VEBO (−)6 V Collector Current IC (−)2 A Collector Current (Pulse) ICP (−)4 A Collector Dissipation PC 0.8 W Tc = 25°C 15 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: Specifications ( ): 2SB1201 DATA SHEET 1 2 3 IPAK / TP CASE 369AJ DPA...
