onsemi 2SK3746
N-Channel Power MOSFET
FEATURES
● Low ON-resistance, low input capacitance, ultrahigh-speed switching● High reliability (Adoption of HVP process)
● Avalanche resistance guarantee Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 *1 VDD=50V, L=20mH, IAV=2A (Fig.1) *2 L≤20mH, single pulse Tch Tstg EAS IAV Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 1500 ±20 2 4 2.5 110 150 --55 to +150 41 2 Unit V V A A W W °C °C mJ A Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7539-002 15.6 4.8 1.5 2SK3746...