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30C02CH Datasheet PDF

onsemi 30C02CH

Bipolar Transistor

Part No. 30C02CH
Datasheet 30C02CH Download
Manufacturer
onsemi
Description Bipolar Transistor
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30C02CH datasheet page 1 preview

APPLICATIONS

● Low-frequency Amplifier, high-speed switching, small motor drive

FEATURES

● Large current capacity
● Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ.=330mΩ[IC=0.7A, IB=35mA]
● Ultrasmall package facilitates miniaturization in end products
● Small ON-resistance (Ron) Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Mounted on a ceramic board (600mm2×0.8mm) Ratings 40 30 5 700 1.4 700 150 --55 to +150 Unit V V V mA A mW °C °C Stresses exceeding

MAXIMUM RATINGS

may damage the device.

MAXIMUM RATINGS

are stress ratings only. Functional operation above the Recommended
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