onsemi 30C02CH
Bipolar Transistor
APPLICATIONS
● Low-frequency Amplifier, high-speed switching, small motor driveFEATURES
● Large current capacity● Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ.=330mΩ[IC=0.7A, IB=35mA]
● Ultrasmall package facilitates miniaturization in end products
● Small ON-resistance (Ron) Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Mounted on a ceramic board (600mm2×0.8mm) Ratings 40 30 5 700 1.4 700 150 --55 to +150 Unit V V V mA A mW °C °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended