onsemi 3LN01S
3LN01S IS -- VSD 1.0 7 VGS=0V 5 3 2 0.1 7 5 3 2 0.01 0.5 100 7 5 3 2 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Diode Forward Voltage, VSD -- V IT00037 Ciss, Coss, Crss -- VDS f=1MHz 10 Ciss 7 5 Coss 3 Crss 2 1.0 0 2 4 6 8 10 12 14 16 18 20 Drain to Source Voltage, VDS -- V IT00039 PD -- Ta 0.20 Gate to Sourse Voltage, VGS -- V Switching Time, SW Time -- ns SW Time -- ID 1000 7 VDD=15V VGS=4V 5 3 2 td(off) tf 100 7 tr 5 3 2 td(on) 10 0.01 2 10 VDS=10V 9 ID=150mA 8 3 5 7 0.1 Drain Current, ID -- A VGS -- Qg 2 IT00038 7 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Total Gate Charge, Qg| Part No. | 3LN01S |
|---|---|
| Datasheet | 3LN01S Download |
| Manufacturer |  onsemi |
| Description | N-Channel Small Signal MOSFET |
| Buy | Stock & Price |
FEATURES
● Low ON-resistance● Ultrahigh-speed switching
● 2.5V drive Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Ratings 30 ±10 0.15 0.6 0.15 150 --55 to +150 Unit V V A A W °C °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7013A-013 1.6 0.4 0.8 0.4 3LN01S-TL-E Ordering & Package Information Device Package Shipping 3LN01S-TL-E SMCP SC-75, SOT-416 3,000 pcs./reel Packing Type: TL Marking memo Pb-Free 0.1 0.3 1.6 0.5 0.5 0.2 LOT No.
