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3LN01SS Datasheet PDF

onsemi 3LN01SS

3LN01SS IS -- VSD SW Time -- ID 1.0 1000 7 VGS=0V 7 VDD=15V VGS=4V 55 Switching Time, SW Time -- ns 33 2 2 td(off) tf 0.1 100 7 7 tr 55 33 td(on) 22 0.01 0.5 100 7 5 3 2 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Diode Forward Voltage, VSD -- V IT00037 Ciss, Coss, Crss -- VDS f=1MHz 10 Ciss 7 5 Coss 3 Crss 2 1.0 0 2 4 6 8 10 12 14 16 18 20 Drain to Source Voltage, VDS -- V IT00039 PD -- Ta 0.2 Gate to Source Voltage, VGS -- V 10 0.01 2 10 VDS=10V 9 ID=150mA 8 3 5 7 0.1 Drain Current, ID -- A VGS -- Qg 2 IT00038 7 6 5 4 3 2
Part No. 3LN01SS
Datasheet 3LN01SS Download
Manufacturer
onsemi
Description N-Channel Small Signal MOSFET
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3LN01SS datasheet page 1 preview

FEATURES

● Low ON-resistance
● Ultrahigh-speed switching
● 2.5V drive Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Ratings 30 ±10 0.15 0.6 0.15 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding

MAXIMUM RATINGS

may damage the device.

MAXIMUM RATINGS

are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7029A-003 1.4 0.25 0.1 3 3LN01SS-TL-E 3LN01SS-TL-H Ordering & Package Information Device Package Shipping 3LN01SS-TL-E SSFP SC-81 8,000 pcs./reel 3LN01SS-TL-H SSFP SC-81 8,000 pcs./reel memo Pb-Free Pb-Free and Halogen Free 0 to 0.02 Packing Type: TL Marking 1.4 0.3 0.8 0.3 LOT No.
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