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3LP01S Datasheet PDF

onsemi 3LP01S

3LP01S IS -- VSD 3 VGS=0V 2 --0.1 7 5 3 2 --0.01 --0.5 100 7 5 3 2 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 Diode Forward Voltage, VSD -- V IT00085 Ciss, Coss, Crss -- VDS f=1MHz 10 7 5 3 2 1.0 0 0.20 Ciss Coss Crss --5 --10 --15 --20 --25 --30 Drain to Source Voltage, VDS -- V IT00087 PD -- Ta Gate to Source Voltage, VGS
Part No. 3LP01S
Datasheet 3LP01S Download
Manufacturer
onsemi
Description P-Channel Small Signal MOSFET
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3LP01S datasheet page 1 preview

FEATURES

● Low ON-resistance
● Ultrahigh-speed switching
● 2.5V drive Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Ratings --30 ±10 --0.1 --0.4 0.15 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding

MAXIMUM RATINGS

may damage the device.

MAXIMUM RATINGS

are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7013A-013 1.6 0.4 0.8 0.4 3LP01S-TL-E 0.1 0.3 1.6 0.5 0.5 0.2 0.75 0.6 0 to 0.1 1 2 3 0.1 MIN 1 : Gate 2 : Source 3 : Drain SMCP Ordering & Package Information Device Package Shipping 3LP01S-TL-E SMCP SC-75,SOT-416 3,000 pcs./reel Packing Type: TL Marking memo Pb-Free LOT No.
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