onsemi 3LP01SS
3LP01SS IS -- VSD 3 VGS=0V 2 --0.1 7 5 3 2 --0.01 --0.5 100 7 5 3 2 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 Diode Forward Voltage, VSD -- V IT00085 Ciss, Coss, Crss -- VDS f=1MHz 10 7| Part No. | 3LP01SS |
|---|---|
| Datasheet | 3LP01SS Download |
| Manufacturer |  onsemi |
| Description | P-Channel Small Signal MOSFET |
| Buy | Stock & Price |
FEATURES
● Low ON-resistance● High-speed switching
● 2.5V drive Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Ratings --30 ±10 --0.1 --0.4 0.15 150 --55 to +150 Unit V V A A W °C °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. LOT No. LOT No. Package Dimensions unit : mm (typ) 7029A-003 1.4 0.3 0.8 0.3 1.4 0.25 0.1 3 3LP01SS-TL-E 3LP01SS-TL-H 0 to 0.02 1 0.45 2 0.2 0.07 0.6 12 3 1 : Gate 2 : Source 3 : Drain SSFP 0...
