onsemi 3SK263
The 3SK263 is classified by IDSX as follows : (unit : mA) Rank 5 IDSX 5.0 to 12.0 min 15 0 0.1 Ratings typ 0.7 0.9 *5 14 2.7 0.015 18 21 1.1 max 1.3 1.6 ±50 ±50 *12 0.03 2.2 Unit V V V nA nA mA mS pF pF dB dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.| Part No. | 3SK263 |
|---|---|
| Datasheet | 3SK263 Download |
| Manufacturer |  onsemi |
| Description | N-Channnel Dual Gate MOSFET |
| Buy | Stock & Price |
FEATURES
● Enhancement type● Small noise figure
● Small cross modulation Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate1-to-Source Voltage Gate2-to-Source Voltage Drain Current Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDS VG1S VG2S ID PD Tch Tstg Conditions Ratings 15 ±8 ±8 30 200 125 --55 to +125 Unit V V V mA mW °C °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions unit : mm (typ) 7014A-006 2.9 0.4 43 3SK263-5-TG-E 0.1 Product & Package Information● Package : CP4
● JEITA, JEDEC : SC-61, SC-82AB, SOT-143, SOT-343
● Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TG Marking 0.05 1.1 2.5 0.3 0.5 1.5 0.5 LOT No. RANK LOT No. 12 0.95 0.85 0.6 1 : Drain 2 : Source 3 : Gate1 4 : Gate2 CP4 TG Electrical Connection 1 3 4 RJ...
