onsemi 5LN01M
N-Channel Small Signal MOSFET
FEATURES
● Low ON-resistance● Ultrahigh-speed switching
● 1.5V drive Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Ratings 50 ±10 0.1 0.4 0.15 150 --55 to +150 Unit V V A A W °C °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7023A-010 0.425 2.0 0.15 3 0.2 5LN01M-TL-E 5LN01M-TL-H 0 to 0.08 2.1 1.25 0.425 12 0.65 0.3 0.9 0.3 1 : Gate 2 : Source 3 : Drain MCP Ordering & Package Info...