onsemi 6HN04MH
N-Channel Silicon MOSFET
| Part No. | 6HN04MH |
|---|---|
| Datasheet | 6HN04MH Download |
| Manufacturer |  onsemi |
| Description | N-Channel Silicon MOSFET |
| Buy | Stock & Price |
FEATURES
● 4V drive. N-Channel Silicon MOSFET General-Purpose Switching DeviceAPPLICATIONS
SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) Ratings 60 ±20 200 800 0.6 150 --55 to +150 Unit V V mA mA W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Marking : FB Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=100mA ID=100mA, VGS=10V ID=50mA,...
