AFGBG70T65SQ Description
IGBT - Power, Single N-Channel, Field Stop IV (FS4), High Speed, D2PAK-7L-LV 650 V, 1.55 V, 70 A AFGBG70T65SQ Using the novel field stop 4th generation IGBT technology, AFGBG70T65SQ offers the optimum performance with both low conduction and switching losses.
AFGBG70T65SQ Key Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Coefficient for Easy Parallel Operation
- High Current Capability
- Low Saturation Voltage: VCE(Sat) = 1.55 V (Typ.) @ IC = 70 A
- 100% of the Parts are Tested for ILM (Note 1)
- Fast Switching
- Tight Parameter Distribution
- AECQ101 Qualified and PPAP Capable