• Part: AFGBG70T65SQ
  • Description: IGBT
  • Manufacturer: onsemi
  • Size: 241.47 KB
Download AFGBG70T65SQ Datasheet PDF
onsemi
AFGBG70T65SQ
Features - Maximum Junction Temperature: TJ = 175°C - Positive Temperature Coefficient for Easy Parallel Operation - High Current Capability - Low Saturation Voltage: VCE(Sat) = 1.55 V (Typ.) @ IC = 70 A - 100% of the Parts are Tested for ILM (Note 1) - Fast Switching - Tight Parameter Distribution - AECQ101 Qualified and PPAP Capable Applications - Automotive HEVEV Onboard Chargers - Automotive HEVEV DCDC Converters - Totem Pole Bridgeless PFC MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector- to- Emitter Voltage VCES Gate- to- Emitter Voltage VGES ±20 Transient Gate- to- Emitter Voltage VGES ±30 Collector Current TC = 25°C TC = 100°C Power Dissipation TC = 25°C 714 W TC = 100°C Pulsed Collector Current (Note 2) TC =...