onsemi AFGY100T65SPD
IGBT
| Part No. | AFGY100T65SPD |
|---|---|
| Datasheet | AFGY100T65SPD Download |
| Manufacturer |  onsemi |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES
● AEC−Q101 Qualified● Very Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 100 A
● Maximum Junction Temperature: TJ = 175°C
● Positive Temperature Co−efficient for Easy Parallel Operating
● Tight Parameter Distribution
● High Input Impedance
● 100% of the Parts are Tested for ILM
● Short Circuit Ruggedness
● Co−packed with Soft Fast Recovery Diode Typical
APPLICATIONS
● Traction Inverter for HEV/EV● Auxiliary DC/AC Converters
● Motor Drives
● Other Power−Train
APPLICATIONS
Requiring High Power SwitchMAXIMUM RATINGS
Rating Symbol Value Unit Collector−to−Emitter Voltage Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage VCES 650 V VGES ±20 V ±30 Collector Current (Note 1) @ TC = 25°C IC 120 @ TC = 100°C 100 Pulsed Collector Current ILM 300 Pulsed Collector Current ICM 300 Diode Forward Current (Note 1) @ TC = 25°C IF 120 @ TC = 100°C 100 Maximum Power Dissipation @ TC = 25°C PD 660 @ TC = 100°C 330 Short Circuit Withstand Time @ TC = 25°C SCWT 6 Voltage Transien...
