onsemi ATP201
MOSFET
FEATURES
● Low ON-resistance● Slim package
● Protection diode in
● 4.5V drive
● Halogen free compliance Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Note :*1 VDD=10V, L=50μH, IAV=18A *2 L≤50μH, Single pulse EAS IAV Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 30 ±20 35 105 30 150 --55 to +150 10 18 Unit V V A A W °C °C mJ A Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7057-001 6.5 4 1.5 0.4 ATP201-TL-H 4.6 2.6 0.4 Product & Package Information● Package : ATPAK
● JEITA, JEDEC :-
● Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking ATP201 LOT No.