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ATP213 Datasheet PDF

onsemi ATP213

N-Channel Power MOSFET

Part No. ATP213
Datasheet ATP213 Download
Manufacturer
onsemi
Description N-Channel Power MOSFET
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ATP213 datasheet page 1 preview

FEATURES

● Low ON-resistance
● 4V drive
● Halogen free compliance
● Large current
● Slim package
● Protection diode in Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Note :*1 VDD=10V, L=100μH, IAV=25A *2 L≤100μH, Single pulse EAS IAV Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 60 ±20 50 150 50 150 --55 to +150 37 25 Unit V V A A W °C °C mJ A Stresses exceeding

MAXIMUM RATINGS

may damage the device.

MAXIMUM RATINGS

are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7057-001 6.5 4 1.5 0.4 ATP213-TL-H 4.6 2.6 0.4 Product & Package Information
● Package : ATPAK
● JEITA, JEDEC :-
● Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking ATP213 LOT No.
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