onsemi B817C
Bipolar Transistor
| Part No. | B817C |
|---|---|
| Datasheet | B817C Download |
| Manufacturer |  onsemi |
| Description | Bipolar Transistor |
| Buy | Stock & Price |
FEATURES
● Large current capacitance● Wide SOA and high durability against breakdown
● Adoption of MBIT process Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C Conditions Ratings Unit -160 V -140 V --6 V --12 A --20 A 2.5 W 120 W 150 °C --55 to +150 °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 18.4 Package Dimensions unit : mm (typ) 7539-001 15.6 4.8 1.5 2SB817C-1E 3.2 7.0 5.0 19.9 13.6 10.0 16.76 Product & Package Information● Package : TO-3P-3L
● JEITA, JEDEC : SC-65, TO-247, SOT-199
● Minimum Packing Quantity : 30 pcs./tube Marking B817C LOT No.
