onsemi BAL99LT1
Switching Diode
FEATURES
●ăPb-Free Package is AvailableMAXIMUM RATINGS
Rating Symbol Value Unit Continuous Reverse Voltage VR 70 Vdc Peak Forward Current IF 100 mAdc Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-ā5 Board (Note 1), TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C RqJA PD 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance, Junction-to-Ambient RqJA 417 Junction and Storage Temperature TJ, Tstg 1. FR-ā5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. -ā55 to +150 °C/W °C