onsemi BAS16DXV6
Dual Switching Diode
| Part No. | BAS16DXV6 |
|---|---|
| Datasheet | BAS16DXV6 Download |
| Manufacturer |  onsemi |
| Description | Dual Switching Diode |
| Buy | Stock & Price |
FEATURES
● S Prefix for Automotive and OtherAPPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
(TA = 25°C) Rating Symbol Max Unit Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms VR IF IFM(surge) 100 200 500 V mA mA THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation (Note 1) TA = 25°C Derate above 25°C PD 357 mW 2.9 mW/°C Thermal Resistance, Junction-to-Ambient (Note 1) RqJA 350 °C/W Characteristic (Both Junctions Heated) Symbol Max Unit Total Device Dissipation (Note 1) TA = 25°C Derate above 25°C PD 500 mW 4.0 mW/°C Thermal Resistance, Junction-to-Ambient (Note 1) RqJA 250 °C/W Junction and Storage Temperature TJ, Tstg − 55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
