onsemi BAS16TT1G
Silicon Switching Diode
| Part No. | BAS16TT1G |
|---|---|
| Datasheet | BAS16TT1G Download |
| Manufacturer |  onsemi |
| Description | Silicon Switching Diode |
| Buy | Stock & Price |
FEATURES
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS CompliantMAXIMUM RATINGS
(TA = 25°C) Rating Symbol Max Unit Continuous Reverse Voltage VR 100 V Recurrent Peak Forward Current IF 200 mA Peak Forward Surge Current Pulse Width = 10 ms IFM(surge) 500 mA THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation, FR−4 Board (Note 1) TA = 25°C Derated above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 555 °C/W Total Device Dissipation, FR−4 Board (Note 2) TA = 25°C Derated above 25°C PD 360 mW 2.9 mW/°C Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 345 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to °C +150 Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad 2.
