onsemi BAS16WT1G
Silicon Switching Diode
FEATURES
● S and NSV Prefix for Automotive and OtherAPPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant DATA SHEET SC−70 CASE 419 STYLE 2 3 CATHODE 1 ANODE
MAXIMUM RATINGS
(TA = 25°C) Rating Symbol Value Unit Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms VR 100 V IR 200 mA IFM(surge) 500 mA Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) PD 200 mW 1.6 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction−to−Ambient One D...