onsemi BAS70-04L
Schottky Barrier Diode
FEATURES
● Extremely Fast Switching Speed● Low Forward Voltage
● S Prefix for Automotive and Other
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
(TJ = 150°C unless otherwise noted) Rating Symbol Value Unit Forward Current Non−Repetitive Peak Forward Surge Current (t ≤ 1.0 s) IF 70 mA IFSM 100 mA Reverse Voltage VR 70 V THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Forward Power Dissipation @ TA = 25°C Derate above 25°C PF 225 mW 1.8 mW/°C Thermal Resistance − Junction−to−Ambient (Note 1) (Note 2) RqJA °C/W 508 311 Operating Junction and Storage Temperature Range TJ, Tstg −55 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 @ minimum pad. 2. FR−4 @ 1.0 x 1.0 in pad.