onsemi BAT54L
Schottky Barrier Diodes
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
(TJ = 125°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C VR 30 Volts PF 200 mW 1.6 mW/°C Forward Current (DC) IF 200 Max mA Non−Repetitive Peak Forward Current IFSM mA tp < 10 msec 600 Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IFRM mA 300 Junction Temperature TJ −55 to +150 °C Storage Temperature Range Tstg − 55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DATA SHEET 30 VOLTS SILICON HOT−CARRIER DETECTOR AND SWITCHING DIODES SOT−23 (TO−236) CASE 318 STYLE 8 3 CATHODE 1 ANODE MARKING DIAGRAM JV3 M G G 1 JV3 = Device C...