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BAT54SWT1G Datasheet PDF

onsemi BAT54SWT1G

Dual Series Schottky Barrier Diodes

Part No. BAT54SWT1G
Datasheet BAT54SWT1G Download
Manufacturer
onsemi
Description Dual Series Schottky Barrier Diodes
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BAT54SWT1G datasheet page 1 preview

FEATURES

● Extremely Fast Switching Speed
● Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc
● AEC Qualified and PPAP Capable
● NSV Prefix for Automotive and Other

APPLICATIONS

Requiring Unique Site and Control Change Requirements
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*

MAXIMUM RATINGS

(TJ = 125C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage Forward Power Dissipation @ TA = 25C Derate above 25C VR 30 V PF 200 mW 1.6 mW/C Forward Current (DC) Non−Repetitive Peak Forward Current tp < 10 msec Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IF IFSM IFRM 200 Max 600 300 mA mA mA Junction Temperature TJ −55 to 125 C Storage Temperature Range Tstg − 55 to +150 C Stresses exceeding

MAXIMUM RATINGS

may damage the device.

MAXIMUM RATINGS

are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
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