onsemi BAT54T1G
Schottky Barrier Diodes
FEATURES
● Extremely Fast Switching Speed● Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc
● S Prefix for Automotive and Other
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
(TJ = 125°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage Forward Power Dissipation, FR−5 Board (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Case VR PF RqJL 30 V 400 mW 4.0 mW/°C 174 °C/W Thermal Resistance, Junction−to−Ambient RqJA 492 °C/W Forward Current (DC) IF 200 Max mA Non−Repetitive Peak Forward Current IFSM 600 mA tp < 10 msec Repetitive Peak Forward Current IFRM 300 mA Pulse Wave = 1 sec, Duty Cycle = 66% Junction Temperature TJ −55 to 125 °C Storage Temperature Range Tstg − 55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.