onsemi BAT54XV2
Schottky Barrier Diodes
FEATURES
● Extremely Fast Switching Speed● Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mA
● S Prefix for Automotive and Other
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
(TJ = 125°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 30 V THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C PD 200 mW 2.0 mW/°C Forward Current (DC) IF 200 Max mA Non−Repetitive Peak Forward Current, tp < 10 msec IFSM 600 mA Repetitive Peak Forward Current IFRM 300 mA Pulse Wave = 1 sec, Duty Cycle = 66% Thermal Resistance, Junction−to−Ambient RqJA 635 °C/W Junction and Storage Temperature TJ, Tstg −55 to 125 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.