onsemi BAV103
General Purpose Diode
DESCRIPTION
A general purpose diode that couples high forward conductance fast switching speed and high blocking voltages in a glass leadless LL−34 surface mount package. Placement of the expansion gap has no relationship to the location of the cathode terminal which is indicated by the first color band.ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) (Note 1) Symbol Parameter Value Units WIV IO IF if IFSM Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current Non−repetitive Peak Forward Current Pulse Width = 1.0 s Pulse Width = 1.0 ms 200 V 200 mA 500 mA 600 mA A 1.0 4.0 TSTG Storage Temperature Range −65 to +200 °C TJ Operating Junction Temperature −65 to +200 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.