onsemi BAV199LT1
Dual Series Switching Diode
FEATURES
● Low Leakage CurrentAPPLICATIONS
● Medium Speed Switching Times● Pb−Free Package is Available
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current (Note 1) (Averaged Over Any 20 ms Period) Repetitive Peak Forward Current Non−Repetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 s Symbol VR IF IFM(surge) VRRM IF(AV) Value 70 215 500 70 715 Unit Vdc mAdc mAdc Vdc mAdc ANODE 1 CATHODE 2 3 CATHODE/ANODE 3 1 2 IFRM IFSM 450 2.0 1.0 0.5 mAdc Adc CASE 318 SOT−23 STYLE 11 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1), TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2), TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 −65 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit MARKING DIAGRAM JY M G G Stresses exceedingMAXIMUM RATINGS
may damage the device.